The knowledge of the crystal shape and of the CoSi2/Si interface is essential for the theoretical modeling of these systems because these features have important influence on the electronic behavior, in particular the Schottky barrier height. Here is presented a comprehensive high resolution transmission electron microscopy (HRTEM) investigation of buried CoSi2/Si nanostructures unconventionally obtained from a soft-chemistry method. In addition, the HRTEM images were studied by a strain state analysis method (GPA) [3] to calculate the 2D lattice distortion around the nanostructures. These results were compared with predictions as obtained by Finite Element Simulation (FE) to verify the induced 3D strain state.
Información general
Fecha de exposición:2011
Fecha de publicación:2011
Idioma del documento:Inglés
Evento:Microscopy and Microanalysis 2011 (Nashville, 7 a 11 de agosto, 2011)
Institución de origen:Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas