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dc.date.accessioned 2022-03-14T13:36:39Z
dc.date.available 2022-03-14T13:36:39Z
dc.date.issued 2010-06-24
dc.identifier.uri http://sedici.unlp.edu.ar/handle/10915/132494
dc.description.abstract We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie–Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms. en
dc.format.extent 6174-6178 es
dc.language en es
dc.subject Ferromagnetism es
dc.subject ZnO es
dc.title ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics? en
dc.type Articulo es
sedici.identifier.other arXiv:1007.0269 es
sedici.identifier.other doi:10.1007/s10853-010-4710-2 es
sedici.identifier.issn 0022-2461 es
sedici.identifier.issn 1573-4803 es
sedici.creator.person Golmar, Federico es
sedici.creator.person Villafuerte, M. es
sedici.creator.person Mudarra Navarro, Azucena Marisol es
sedici.creator.person Rodríguez Torres, Claudia Elena es
sedici.creator.person Barzola Quiquia, José es
sedici.creator.person Esquinazi, Pablo es
sedici.creator.person Heluani, S. P. es
sedici.subject.materias Física es
sedici.description.fulltext true es
mods.originInfo.place Instituto de Física La Plata es
sedici.subtype Preprint es
sedici.rights.license Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0)
sedici.rights.uri http://creativecommons.org/licenses/by-nc-sa/4.0/
sedici.description.peerReview peer-review es
sedici.relation.journalTitle Journal of Materials Science es
sedici.relation.journalVolumeAndIssue vol. 45, no. 22 es


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